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ARF460A/G ARF460B/G
125V, 150W, 65MHz
N-CHANNEL ENHANCEMENT MODE
TO -2 47
RF POWER MOSFET
The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been optimized for both linear and high efficiency classes of operation.
Common Source
* Specified 125 Volt, 40.68MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (Class AB) Efficiency = 75% (Class C)
* Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness * RoHS Compliant
Maximum Ratings
Symbol VDSS VDGO ID VGS PD RJC TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC =25C unless otherwise specified
ARF460AG/BG 500 500 14 30 250 0.50 -55 to 150 300 Unit V A V W C/W C
Static Electrical Characteristics
Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage
1
Min 500
Typ
Max
Unit V
(ID(ON) = 7A, VGS = 10V)
4 25 250 100 3.3 3 5.5 8 5
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125C) Gate-Source Leakage Current (VDS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7A) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
A nA mhos Volts
050-5966 Rev E 10-2007
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol CISS Coss Crss td(ON) tr td(off) tf Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1MHz VGS = 15V VDD = 0.5VDSS ID =ID[Cont.] @ 25C RG = 1.6 Min Typ 1200 150 60 7 6 20 4.0
ARF460AG/BG
Max 1400 180 75 pF Unit
ns 7
Functional Characteristics
Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68MHz Idq = 50mA VDD = 125V POUT = 150W Min 13 70 Typ 15 75 Max Unit dB %
No Degradation in Output Power
1. Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
5000 Ciss 1000 CAPACITANCE (pf) 500 Coss Crss 100 50
10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
16 ID, DRAIN CURRENT (AMPERES)
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPERES)
56
OPERATION HERE LIMITED BY R (ON) DS
100uS
12
10 5
1mS 10mS
8
1 .5 TC =+25C TJ =+150C SINGLE PULSE
4 TJ = +125C
TJ = -55C
100mS DC
050-5966 Rev E 10-2007
TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics
.1
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area
ARF460AG/BG
1.2 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 25 VGS=15 & 10V
9V
1.1
20 8V 15 7V 10 6.5V 6V 5 5.5V 5V 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics
1.0
0.9
0.8
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 0.60 0.50 0.9 0.40 0.30 0.7 0.5
0.7 -50 -25
0
, THERMAL IMPEDANCE (C/W)
0.20 0.10 0 10-5
0.3 0.1 0.05 10-4
Z
qJC
SINGLE PULSE 1.0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL Junction temp. ( "C) 0.0284 0.00155F
Power (Watts)
0.165
0.00934F
0.307 Case temperature
0.128F
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz) 2.0 13.5 27 40 65
Zin () 20.9 - j 9.2 2.4 - j 6.8 .57 - j 2.6 .31 - j 0.5 .44 - j 1.9
ZOL () 38 - j 2.6 31 - j 14 19.6 - j 17.6 6.0 - j 10.5
050-5966 Rev E 10-2007
12.5 - j 15.8
ZIN - Gate shunted with 25 Idq = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd=125V
ARF460AG/BG
L4 Bias 0 - 12V
+ C6 R1
C7 L3 C9 L1 R2 C1 DUT L2
C8
+ 125V -
RF Input C2
C5 C4
C3
40.68 MHz Test Circuit
C1 -- 2000 pF 100V NPO chip mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 F 500V ceramic chip C9 -- 2200 pF 500V chip RF L1 -- 4t #20 AWG .25"ID .3 "L ~80nH Output L2 -- 6t #16 AWG .312" ID .4"L ~185nH L3 -- 15t #24 AWG .25"ID ~.85uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF460A/B
TO-247 Package Outline
4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Source
NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair.
3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
Device ARF- A ARF- B
Gate ------- Drain Source ---- Source Drain ------- Gate
2.21 (.087) 2.59 (.102)
050-5966 Rev E 10-2007
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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